inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor 2SD1516 description low collector saturation voltage good linearity of h fe high switching speed high i c applications designed for power amplifier , power switching applications. absolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector-base voltage 130 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current -continuous 2 a i cm collector current-peak 5 a p c collector power dissipation @t a =25 1.4 w collector power dissipation @t c =25 25 t j junction temperature 150 t stg storage temperature -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2SD1516 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma ;i b = 0 80 v v ce (sat) collector-emitter satu ration voltage i c = 2a ;i b = 0.1a 0.5 v v be (sat) base-emitter satura tion voltage i c = 2a ;i b = 0.1a 1.5 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 50 a h fe-1 dc current gain i c = 0.1a ; v ce = 2v 45 h fe-2 dc current gain i c = 0.5a ; v ce = 2v 60 260 f t current gain-bandwidth product i c = 0.5a; v ce = 10v 2.5 mhz switching times t on turn-on time i c = 0.5a ,i b1 = -i b2 = 50ma 0.1 s t stg storage time 2.5 s t f fall time 0.3 s ? h fe-2 classifications r q p 60-120 90-180 130-260
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